Daily Papers

The discovery of van der Waals magnets has established a new domain in the field of magnetism, opening novel pathways for the electrical control of magnetic properties. In this context, Fe3GeTe2 (FGT) emerges as an exemplary candidate owing to its intrinsic metallic properties, which facilitate the interplay of both charge and spin degrees of freedom. Here, the bidirectional voltage control of exchange bias (EB) effect in a perpendicularly magnetized all-van der Waals FGT/O-FGT/hBN heterostructure is demonstrated. The antiferromagnetic O-FGT layer is formed by naturally oxidizing the FGT surface. The observed EB magnitude reaches 1.4 kOe with a blocking temperature (150 K) reaching close to the Curie temperature of FGT. Both the exchange field and the blocking temperature values are among the highest in the context of layered materials. The EB modulation exhibits a linear dependence on the gate voltage and its polarity, observable in both positive and negative field cooling (FC) experiments. Additionally, gate voltage-controlled magnetization switching, highlighting the potential of FGT-based heterostructures is demonstrated in advanced spintronic devices. These findings display a methodology to modulate the magnetism of van der Waals magnets offering new avenues for the development of high-performance magnetic devices.

Two-dimensional (2D) materials have emerged as a versatile and powerful platform for quantum technologies, offering atomic-scale control, strong quantum confinement, and seamless integration into heterogeneous device architectures. Their reduced dimensionality enables unique quantum phenomena, including optically addressable spin defects, tunable single-photon emitters, low-dimensional magnetism, gate-controlled superconductivity, and correlated states in Moiré superlattices. This Roadmap provides a comprehensive overview of recent progress and future directions in exploiting 2D materials for quantum sensing, computation, communication, and simulation. We survey advances spanning spin defects and quantum sensing, quantum emitters and nonlinear photonics, computational theory and data-driven discovery of quantum defects, spintronic and magnonic devices, cavity-engineered quantum materials, superconducting and hybrid quantum circuits, quantum dots, Moiré quantum simulators, and quantum communication platforms. Across these themes, we identify common challenges in defect control, coherence preservation, interfacial engineering, and scalable integration, alongside emerging opportunities driven by machine-learning-assisted design and integrated experiment-theory feedback loops. By connecting microscopic quantum states to mesoscopic excitations and macroscopic device architectures, this Roadmap outlines a materials-centric framework for integrating coherent quantum functionalities and positions 2D materials as foundational building blocks for next-generation quantum technologies.

High magnetic field and low temperature transport is carried out in order to characterize the charge carriers of PtSe_2. In particular, the Shubnikov-de Haas oscillations arising at applied magnetic field strengths gtrsim 4.5,T are found to occur exclusively in plane and emerge at a layer thickness of approx 18,nm, increasing in amplitude and decreasing in frequency for thinner PtSe_2 flakes. Moreover, the quantum transport time, Berry phase, Dingle temperature and cyclotron mass of the charge carriers are ascertained. The emergence of weak antilocalization (WAL) lies in contrast to the presence of magnetic moments from Pt vacancies. An explanation is provided on how WAL and the Kondo effect can be observed within the same material. Detailed information about the charge carriers and transport phenomena in PtSe_2 is obtained, which is relevant for the design of prospective spintronic and orbitronic devices and for the realization of orbital Hall effect-based architectures.

Spintronics is expected as the next-generation technology based on the novel notch of spin degree of freedom of electrons. Half metals, a class of materials which behave as a metal in one spin direction and an insulator in the opposite spin direction, are ideal for spintronic applications. Half metallic antiferromagnets as a subclass of half metals are characterized further by totally compensated spin moments in a unit cell, and have the advantage of being able to generate fully spin-polarized current while exhibiting zero macroscopic magnetization. Considerable efforts have been devoted to the search for this novel material, from which we may get useful hints for prospective material exploration.

Spintronics aims to utilize the spin degree of freedom for information storage and computing applications. One major issue is the generation and detection of spins via spin and charge conversion. Quantum materials have recently exhibited many unique spin-dependent properties, which can be used as promising material candidates for efficient spin and charge conversion. Here, we review recent findings concerning spin and charge conversion in quantum materials, including Rashba interfaces, topological insulators, two-dimensional materials, superconductors, and non-collinear antiferromagnets. Important progress in using quantum materials for spin and charge conversion could pave the way for developing future spintronics devices.

Neuromorphic spintronics combines two advanced fields in technology, neuromorphic computing and spintronics, to create brain-inspired, efficient computing systems that leverage the unique properties of the electron's spin. In this book chapter, we first introduce both fields - neuromorphic computing and spintronics and then make a case for neuromorphic spintronics. We discuss concrete examples of neuromorphic spintronics, including computing based on fluctuations, artificial neural networks, and reservoir computing, highlighting their potential to revolutionize computational efficiency and functionality.

Topological magnons give rise to possibilities for engineering novel spintronics devices with critical applications in quantum information and computation, due to its symmetry-protected robustness and low dissipation. However, to make reliable and systematic predictions about material realization of topological magnons has been a major challenge, due to the lack of neutron scattering data for most materials. In this work, we significantly advance the symmetry-based approach for identifying topological magnons through developing a fully automated algorithm, utilizing the theory of symmetry indicators, that enables a highly efficient and large-scale search for candidate materials hosting field-induced topological magnons. This progress not only streamlines the discovery process but also expands the scope of materials exploration beyond previous manual or traditional methods, offering a powerful tool for uncovering novel topological phases in magnetic systems. Performing a large-scale search over all 1649 magnetic materials in Bilbao Crystallographic Server with a commensurate magnetic order, we discover 387 candidate materials for topological magnons, significantly expanding the pool of topological magnon materials. We further discuss examples and experimental accessibility of the candidate materials, shedding light on future experimental realizations of topological magnons in magnetic materials.

Advances in scaling down heterostructures and having an improved interface quality together with atomically-thin two-dimensional materials suggest a novel approach to systematically design materials. A given material can be transformed through proximity effects whereby it acquires properties of its neighbors, for example, becoming superconducting, magnetic, topologically nontrivial, or with an enhanced spin-orbit coupling. Such proximity effects not only complement the conventional methods of designing materials by doping or functionalization, but can also overcome their various limitations. In proximitized materials it is possible to realize properties that are not present in any constituent region of the considered heterostructure. While the focus is on magnetic and spin-orbit proximity effects with their applications in spintronics, the outlined principles provide also a broader framework for employing other proximity effects to tailor materials and realize novel phenomena.

A domain wall (DW) which moves parallel to a magnetically compensated interface between an antiferromagnetic insulator (AFMI) and a two-dimensional (2D) metal can pump spin polarization into the metal. It is assumed that localized spins of a collinear AFMI interact with itinerant electrons through their exchange interaction on the interface. We employed the formalism of Keldysh Green's functions for electrons which experience potential and spin-orbit scattering on random impurities. This formalism allows a unified analysis of spin pumping, spin diffusion and spin relaxation effects on a 2D electron gas. It is shown that the pumping of a nonstaggered magnetization into the metal film takes place in the second order with respect to the interface exchange interaction. At sufficiently weak spin relaxation this pumping effect can be much stronger than the first-order effect of the Pauli magnetism which is produced by the small nonstaggered exchange field of the DW. It is shown that the pumped polarization is sensitive to the geometry of the electron's Fermi surface and increases when the wave vector of the staggered magnetization approaches the nesting vector of the Fermi surface. In a disordered diffusive electron gas the induced spin polarization follows the motion of the domain wall. It is distributed asymmetrically around the DW over a distance which can be much larger than the DW width.

Integrated circuits are a cornerstone of modern information technology, and analog wave-based architectures could enable fast and efficient processing beyond conventional charge electronics. In magnonics, spin waves provide a highly tunable, compact and energy-efficient medium for on-chip microwave signal transport and processing. However, progress has been limited to isolated elements or short devices, severely limiting the overall functional complexity and scalability. Here we realize the key elements of universal magnonic circuitry, using a single-step direct laser writing process in yttrium iron garnet, and monolithically cascade them in multi-stage programmable devices and networks. Using magneto-optical Kerr effect microscopy, we show efficient spin-wave propagation and preserved phase coherence in waveguide structures for hundreds of wavelengths. In coupled waveguides, we observe complete and periodic power transfer over several coupling lengths, and in phase shifters we achieve arbitrary, tunable phase delays. By cascading these elements, we realize programmable splitters, frequency demultiplexers, and phase-controlled 2x2 routers, where output power and relative phase can be programmed on demand via external fields. Finally, we realize programmable magnonic interferometric meshes for on-chip radio-frequency signal routing, with up to six magnonic inputs and outputs and seven cascaded stages, without the need for intermediate amplification. These direct-write cascaded networks bridge a long-standing gap in magnonic scalability, offering a viable pathway toward integrated, large-scale architectures for both classical and quantum processing.

Two-dimensional (2D) magnetism in atomically thin van der Waals (vdW) monolayers and heterostructures has attracted significant attention due to its promising potential for next-generation spintronic and quantum technologies. A key factor in stabilizing long-range magnetic order in these systems is magnetic anisotropy, which plays a crucial role in overcoming the limitations imposed by the Mermin-Wagner theorem. This review provides a comprehensive theoretical and experimental overview of the importance of magnetic anisotropy in enabling intrinsic 2D magnetism and shaping the electronic, magnetic, and topological properties of 2D vdW materials. We begin by summarizing the fundamental mechanisms that determine magnetic anisotropy, emphasizing the contributions from strong ligand spin-orbit coupling of ligand atoms and unquenched orbital magnetic moments. We then examine a range of material engineering approaches, including alloying, doping, electrostatic gating, strain, and pressure, that have been employed to effectively tune magnetic anisotropy in these materials. Finally, we discuss open challenges and promising future directions in this rapidly advancing field. By presenting a broad perspective on the role of magnetic anisotropy in 2D magnetism, this review aims to stimulate ongoing efforts and new ideas toward the realization of robust, room-temperature applications based on 2D vdW magnetic materials and their heterostructures.

In 2021 Nature Physics published a paper by Vaitiekenas, Liu, Krogstrup and Marcus titled "Zero-bias peaks at zero magnetic field in ferromagnetic hybrid nanowires". The paper reports low temperature transport measurements on semiconductor InAs nanowires with two partly overlapping shells -- a shell of EuS, a magnetic insulator, and a shell of Al, a metal that becomes superconducting at temperatures below 1.2K. The paper claims that (1) the data are consistent with induced topological superconductivity and Majorana zero modes (MZMs), and (2) that this is facilitated by the breaking of the time reversal symmetry through a direct magnetic interaction with the EuS shell. In this Matters Arising, we present an alternative explanation which is based on trivial effects that are likely to appear in the reported geometry. Specifically, first, we find that data the authors present in support of the topological superconductivity claim can originate from unintended quantum dots in their devices, a widely known likely explanation that is not being discussed in the paper. Second, our analysis of the setup, supported by our numerical micromagnetic simulations, shows similar effects could be obtained due to stray magnetic fields from the region of the EuS shell damaged during Al etching. This basic picture should come before the exotic interpretation in terms of magnetic exchange interaction with a ferromagnetic insulator.

This study examines the performance of finite spin quantum batteries (QBs) using Heisenberg spin models with Dzyaloshinsky-Moriya (DM) and Kaplan--Shekhtman--Entin-Wohlman--Aharony (KSEA) interactions. The QBs are modeled as interacting quantum spins in local inhomogeneous magnetic fields, inducing variable Zeeman splitting. We derive analytical expressions for the maximal extractable work, ergotropy and the capacity of QBs, as recently examined by Yang et al. [Phys. Rev. Lett. 131, 030402 (2023)]. These quantities are analytically linked through certain quantum correlations, as posited in the aforementioned study. Different Heisenberg spin chain models exhibit distinct behaviors under varying conditions, emphasizing the importance of model selection for optimizing QB performance. In antiferromagnetic (AFM) systems, maximum ergotropy occurs with a Zeeman splitting field applied to either spin, while ferromagnetic (FM) systems benefit from a uniform Zeeman field. Temperature significantly impacts QB performance, with ergotropy in the AFM case being generally more robust against temperature increases compared to the FM case. Incorporating DM and KSEA couplings can significantly enhance the capacity and ergotropy extraction of QBs. However, there exists a threshold beyond which additional increases in these interactions cause a sharp decline in capacity and ergotropy. This behavior is influenced by temperature and quantum coherence, which signal the occurrence of a sudden phase transition. The resource theory of quantum coherence proposed by Baumgratz et al. [Phys. Rev. Lett. 113, 140401 (2014)] plays a crucial role in enhancing ergotropy and capacity. However, ergotropy is limited by both the system's capacity and the amount of coherence. These findings support the theoretical framework of spin-based QBs and may benefit future research on quantum energy storage devices.

It was previously believed that the Bloch electronic states of non-magnetic materials with inversion symmetry cannot have finite spin polarizations. However, since the seminal work by Zhang et al. [Nat. Phys. 10, 387-393 (2014)] on local spin polarizations of Bloch states in non-magnetic, centrosymmetric materials, the scope of spintronics has been significantly broadened. Here, we show, using a framework that is universally applicable independent of whether hidden spin polarizations are small (e.g., diamond, Si, Ge, and GaAs) or large (e.g., MoS2 and WSe2), that the corresponding quantity arising from orbital - instead of spin - degrees of freedom, the hidden orbital polarization, is (i) much more abundant in nature since it exists even without spin-orbit coupling and (ii) more fundamental since the interband matrix elements of the site-dependent orbital angular momentum operator determines the hidden spin polarization. We predict that the hidden spin polarization of transition metal dichalcogenides is reduced significantly upon compression. We suggest experimental signatures of hidden orbital polarization from photoemission spectroscopies and demonstrate that the current-induced hidden orbital polarization may play a far more important role than its spin counterpart in antiferromagnetic information technology by calculating the current-driven antiferromagnetism in compressed silicon.

The emergence of two-dimensional (2D) materials has attracted a great deal of attention due to their fascinating physical properties and potential applications for future nanoelectronic devices. Since the first isolation of graphene, a Dirac material, a large family of new functional 2D materials have been discovered and characterized, including insulating 2D boron nitride, semiconducting 2D transition metal dichalcogenides and black phosphorus, and superconducting 2D bismuth strontium calcium copper oxide, molybdenum disulphide and niobium selenide, etc. Here, we report the identification of ferromagnetic thin flakes of Cr2Ge2Te6 (CGT) with thickness down to a few nanometers, which provides a very important piece to the van der Waals structures consisting of various 2D materials. We further demonstrate the giant modulation of the channel resistance of 2D CGT devices via electric field effect. Our results illustrate the gate voltage tunability of 2D CGT and the potential of CGT, a ferromagnetic 2D material, as a new functional quantum material for applications in future nanoelectronics and spintronics.

The magnetization in a superconductor induced due to the inverse proximity effect is investigated in hybrid bilayers containing a superconductor and a ferromagnetic insulator or a strongly spin-polarized ferromagnetic metal. The study is performed within a quasiclassical Green function framework, wherein Usadel equations are solved with boundary conditions appropriate for strongly spin-polarized ferromagnetic materials. A comparison with recent experimental data is presented. The singlet to triplet conversion of the superconducting correlations as a result of the proximity effect with a ferromagnet is studied.

We demonstrate a coherent spin shuttle through a GaAs/AlGaAs quadruple-quantum-dot array. Starting with two electrons in a spin-singlet state in the first dot, we shuttle one electron over to either the second, third or fourth dot. We observe that the separated spin-singlet evolves periodically into the m=0 spin-triplet and back before it dephases due to nuclear spin noise. We attribute the time evolution to differences in the local Zeeman splitting between the respective dots. With the help of numerical simulations, we analyse and discuss the visibility of the singlet-triplet oscillations and connect it to the requirements for coherent spin shuttling in terms of the inter-dot tunnel coupling strength and rise time of the pulses. The distribution of entangled spin pairs through tunnel coupled structures may be of great utility for connecting distant qubit registers on a chip.

Correlated electron systems are among the centerpieces of modern condensed matter sciences, where many interesting physical phenomena, such as metal-insulator transition and high-Tc superconductivity appear. Recent efforts have been focused on electrostatic doping of such materials to probe the underlying physics without introducing disorder as well as to build field-effect transistors that may complement conventional semiconductor metal-oxide-semiconductor field effect transistor (MOSFET) technology. This review focuses on metal-insulator transition mechanisms in correlated electron materials and three-terminal field effect devices utilizing such correlated oxides as the channel layer. We first describe how electron-disorder interaction, electron-phonon interaction and/or electron correlation in solids could modify the electronic properties of materials and lead to metal-insulator transitions. Then we analyze experimental efforts toward utilizing these transitions in field effect transistors and their underlying principles. It is pointed out that correlated electron systems show promise among these various materials displaying phase transitions for logic technologies. Furthermore, novel phenomena emerging from electronic correlation could enable new functionalities in field effect devices. We then briefly review unconventional electrostatic gating techniques, such as ionic liquid gating and ferroelectric gating, which enables ultra large carrier accumulation density in the correlated materials which could in turn lead to phase transitions. The review concludes with a brief discussion on the prospects and suggestions for future research directions in correlated oxide electronics for information processing.

The Orbital Hall effect, which originates from materials with weak spin-orbit coupling, has attracted considerable interest for spin-orbitronic applications. Here, we demonstrate the inverse effect of the orbital Hall effect and observe orbitronic terahertz emission in the Ti and Mn materials. Through spin-orbit transition in the ferromagnetic layer, the generated orbital current can be converted to charge current in the Ti and Mn layers via the inverse orbital Hall effect. Furthermore, the inserted W layer provides an additional conversion of the orbital-charge current in the Ti and Mn layers, significantly enhancing the orbitronic terahertz emission. Moreover, the orbitronic terahertz emission can be manipulated by cooperating with the inverse orbital Hall effect and the inverse spin Hall effect in the different sample configurations. Our results not only discover the physical mechanism of condensed matter physics but also pave the way for designing promising spin-orbitronic devices and terahertz emitters.

We carried out numerical simulations of propagation of spin waves (magnons in quantum language) in a yttrium-iron garnet film. The numerical model is based on an original formalism. We demonstrated that a potential barrier for magnons, created by an Oersted field of a dc current flowing through a wire sitting on top of the film, is able to act as an electrically controlled partly transparent mirror for the magnons. We found that the mirror transparency can be set to 50% by properly adjusting the current strength, thus creating a semi-transparent mirror. A strong Hong-Ou-Mandel Effect for single magnons is expected in this configuration. The effect must be seen as two single magnons, launched simultaneously into the film from two transducers located from the opposite sides of the mirror, creating a two-microwave-photon state at the output port of one of the transducers. The probability of seeing those two-photon states at the output port of either transducer must be the same for both transducers.

A large transverse thermoelectric response, known as anomalous Nernst effect (ANE) has been recently observed in several topological magnets. Building a thermopile employing this effect has been the subject of several recent propositions. Here, we design and build a thermopile with an array of tilted adjacent crystals of Mn_3Sn. The design employs a single material and replaces pairs of P and N thermocouples of the traditional design with hermaphroditic legs. The design exploits the large lag angle between the applied field and the magnetization, which we attribute to the interruption of magnetic octupoles at the edge of xy-plane. Eliminating extrinsic contacts between legs will boost the efficiency, simplify the process and pave the way for a new generation of thermopiles.

Developing the field of neuromorphic quantum computing necessitates designing scalable quantum memory devices. Here, we propose a superconducting quantum memory device in the microwave regime, termed as a microwave quantum memcapacitor. It comprises two linked resonators, the primary one is coupled to a Superconducting Quantum Interference Device, which allows for the modulation of the resonator properties through external magnetic flux. The auxiliary resonator, operated through weak measurements, provides feedback to the primary resonator, ensuring stable memory behaviour. This device operates with a classical input in one cavity while reading the response in the other, serving as a fundamental building block toward arrays of microwave quantum memcapacitors. We observe that a bipartite setup can retain its memory behaviour and gains entanglement and quantum correlations. Our findings pave the way for the experimental implementation of memcapacitive superconducting quantum devices and memory device arrays for neuromorphic quantum computing.

Hybrid superconductor-semiconductor systems have received a great deal of attention in the last few years because of their potential for quantum engineering, including novel qubits and topological devices. The proximity effect, the process by which the semiconductor inherits superconducting correlations, is an essential physical mechanism of such hybrids. Recent experiments have demonstrated the proximity effect in hole-based semiconductors, but, in contrast to electrons, the precise mechanism by which the hole bands acquire superconducting correlations remains an open question. In addition, hole spins exhibit a complex strong spin-orbit interaction, with largely anisotropic responses to electric and magnetic fields, further motivating the importance of understanding the interplay between such effects and the proximity effect. In this work, we analyze this physics with focus on germanium-based two-dimensional gases. Specifically, we develop an effective theory supported by full numerics, allowing us to extract various analytical expressions and predict different types of superconducting correlations including non-standard forms of singlet and triplet pairing mechanisms with non-trivial momentum dependence; as well as different Zeeman and Rashba spin-orbit contributions. This, together with their precise dependence on electric and magnetic fields, allows us to make specific experimental predictions, including the emergence of f-type superconductivity, Bogoliubov Fermi surfaces, and gapless regimes caused by large in-plane magnetic fields.

In this study, the spin-orbit torque (SOT) in light metal oxide systems is investigated using an experimental approach based on harmonic Hall voltage techniques in out-of-plane (OOP) angular geometry for samples with in-plane magnetic anisotropy. In parallel, an analytical derivation of this alternative OOP harmonic Hall detection geometry has been developed, followed by experimental validation to extract SOT effective fields. In addition, to accurately quantifying SOT, this method allows complete characterization of thermoelectric effects, opening promising avenues for accurate SOT characterization in related systems. In particular, this study corroborates the critical role of naturally oxidized copper interfaced with metallic Cu in the generation of orbital current in Co(2)|Pt(4)|CuOx(3), demonstrating a two-fold increase in damping-like torques compared to a reference sample with an oxidized Al capping layer. These findings offer promising directions for future research on the application aspect of non-equilibrium orbital angular momentum.

Dirac and Weyl materials refer to a class of solid materials which host low-energy quasiparticle excitations that can be described by the Dirac and Weyl equations in relativistic quantum mechanics. Starting with the advent of graphene as the first prominent example, these materials have been attracting tremendous interest owing to their novel fundamental properties as well as the great potential for applications. Here we introduce the basic concepts and notions related to Dirac and Weyl materials and briefly review some recent works in this field, particularly on the conceptual development and the possible spintronics/pseudospintronics applications.

Conventional semiconductor-based integrated circuits are gradually approaching fundamental scaling limits. Many prospective solutions have recently emerged to supplement or replace both the technology on which basic devices are built and the architecture of data processing. Neuromorphic circuits are a promising approach to computing where techniques used by the brain to achieve high efficiency are exploited. Many existing neuromorphic circuits rely on unconventional and useful properties of novel technologies to better mimic the operation of the brain. One such technology is single flux quantum (SFQ) logic -- a cryogenic superconductive technology in which the data are represented by quanta of magnetic flux (fluxons) produced and processed by Josephson junctions embedded within inductive loops. The movement of a fluxon within a circuit produces a quantized voltage pulse (SFQ pulse), resembling a neuronal spiking event. These circuits routinely operate at clock frequencies of tens to hundreds of gigahertz, making SFQ a natural technology for processing high frequency pulse trains. Prior proposals for SFQ neural networks often require energy-expensive fluxon conversions, involve heterogeneous technologies, or exclusively focus on device level behavior. In this paper, a design methodology for deep single flux quantum neuromorphic networks is presented. Synaptic and neuronal circuits based on SFQ technology are presented and characterized. Based on these primitives, a deep neuromorphic XOR network is evaluated as a case study, both at the architectural and circuit levels, achieving wide classification margins. The proposed methodology does not employ unconventional superconductive devices or semiconductor transistors. The resulting networks are tunable by an external current, making this proposed system an effective approach for scalable cryogenic neuromorphic computing.

The development of selective high precision chemical functionalization strategies for device fabrication, in conjunction with associated techniques for patterning graphene wafers with atomic accuracy would provide the necessary basis for a post-CMOS manufacturing technology. This requires a thorough understanding of the principles governing the reactivity and patterning of graphene at the sub-nanometer length scale. This article reviews our quest to delineate the principles of graphene chemistry - that is, the chemistry at the Dirac point and beyond, and the effect of covalent chemistry on the electronic structure, electrical transport and magnetic properties of this low-dimensional material in order to enable the scalable production of graphene-based devices for low- and high-end technology applications.

A new multiferroic material, CuBr2, is reported for the first time. CuBr2 has not only a high transition temperature (close to liquid nitrogen temperature) but also low dielectric loss and strong magnetoelectric coupling. These findings reveal the importance of anion effects in the search for the high temperature multiferroics materials among these low-dimensional spin systems.

Technologies that function at room temperature often require magnets with a high Curie temperature, T_C, and can be improved with better materials. Discovering magnetic materials with a substantial T_C is challenging because of the large number of candidates and the cost of fabricating and testing them. Using the two largest known data sets of experimental Curie temperatures, we develop machine-learning models to make rapid T_C predictions solely based on the chemical composition of a material. We train a random forest model and a k-NN one and predict on an initial dataset of over 2,500 materials and then validate the model on a new dataset containing over 3,000 entries. The accuracy is compared for multiple compounds' representations ("descriptors") and regression approaches. A random forest model provides the most accurate predictions and is not improved by dimensionality reduction or by using more complex descriptors based on atomic properties. A random forest model trained on a combination of both datasets shows that cobalt-rich and iron-rich materials have the highest Curie temperatures for all binary and ternary compounds. An analysis of the model reveals systematic error that causes the model to over-predict low-T_C materials and under-predict high-T_C materials. For exhaustive searches to find new high-T_C materials, analysis of the learning rate suggests either that much more data is needed or that more efficient descriptors are necessary.

Using an evolutionary algorithm in combination with first-principles density functional theory calculations, we identify two-dimensional (2D) CaP_3 monolayer as a new Dirac semimetal due to inversion and nonsymmorphic spatial symmetries of the structure. This new topological material, composed of light elements, exhibits high structural stability (higher than the phase known in the literature), which is confirmed by thermodynamic and kinetic stability analysis. Moreover, it satisfies the electron filling criteria, so that its Dirac state is located near the Fermi level. The existence of the Dirac state predicted by the theoretical symmetry analysis is also confirmed by first-principles electronic band structure calculations. We find that the energy position of the Dirac state can be tuned by strain, while the Dirac state is unstable against an external electric field since it breaks the spatial inversion symmetry. Our findings should be instrumental in the development of 2D Dirac fermions based on light elements for their application in nanoelectronic devices and topological electronics.

The study of twisted two-dimensional (2D) materials, where twisting layers create moiré superlattices, has opened new opportunities for investigating topological phases and strongly correlated physics. While systems such as twisted bilayer graphene (TBG) and twisted transition metal dichalcogenides (TMDs) have been extensively studied, the broader potential of a seemingly infinite set of other twistable 2D materials remains largely unexplored. In this paper, we define "theoretically twistable materials" as single- or multi-layer structures that allow for the construction of simple continuum models of their moiré structures. This excludes, for example, materials with a "spaghetti" of bands or those with numerous crossing points at the Fermi level, for which theoretical moiré modeling is unfeasible. We present a high-throughput algorithm that systematically searches for theoretically twistable semimetals and insulators based on the Topological 2D Materials Database. By analyzing key electronic properties, we identify thousands of new candidate materials that could host rich topological and strongly correlated phenomena when twisted. We propose representative twistable materials for realizing different types of moiré systems, including materials with different Bravais lattices, valleys, and strength of spin-orbital coupling. We provide examples of crystal growth for several of these materials and showcase twisted bilayer band structures along with simplified twisted continuum models. Our results significantly broaden the scope of moiré heterostructures and provide a valuable resource for future experimental and theoretical studies on novel moiré systems.

We prepared Na_xTO_2 (T = Mn, Co) nanostructures to use as cathode material in Na-ion batteries. The Rietveld refinement of x-ray diffraction data confirms the hexagonal symmetry. Scanning and transmission electron microscopy measurements show hexagonal and rod-shape morphology for T = Co and Mn, respectively. The magnetic measurements indicate the presence of variable oxidation states of Mn/Co ions, but no long range ordering till 5~K. We find that the Na_{0.6}MnO_2 is highly insulating whereas Na_{0.7}CoO_2 is semiconducting in nature. The conduction in Na_{0.7}CoO_2 takes place through both variable range hopping (VRH) as well as activation mechanisms in different temperature ranges. However, for Na_{0.6}MnO_2 the VRH prevails at elevated temperatures. Furthermore, the coin cells have been fabricated and tested the electrochemical behavior using cyclic voltammetry, which confirms the reversibility of Na--ions during intercalation/de-intercalation.

We show how superconductors can be used to couple, initialize, and read out spatially separated spin qubits. When two single-electron quantum dots are tunnel coupled to the same superconductor, the singlet component of the two-electron state partially leaks into the superconductor via crossed Andreev reflection. This induces a gate-controlled singlet-triplet splitting which, with an appropriate superconductor geometry, remains large for dot separations within the superconducting coherence length. Furthermore, we show that when two double-dot singlet-triplet qubits are tunnel coupled to a superconductor with finite charging energy, crossed Andreev reflection enables a strong two-qubit coupling over distances much larger than the coherence length.

The superconducting materials that make up an MKID have a significant effect on its performance. The T_c and normal state resistivity ρ_N of the film determine the penetration depth λ and therefore how much kinetic inductance it has. The ratio of kinetic inductance to total inductance (α), the volume of the inductor, and Q_m determines the magnitude of the response to incoming energy. The quasiparticle lifetime τ_qp is the characteristic time during which the MKID's surface impedance is modified by the incoming energy. Many materials have been explored for use in superconducting resonators and MKIDs, but that information is often not published or scattered around the literature. This chapter contains information and references on the work that has been done with thin film lithographed circuits for MKIDs over the last two decades. Note that measured material properties such as the internal loss quality factor Q_i and quasiparticle lifetime τ_qp vary significantly depending on how the MKID superconducting thin film is made and the system they are measured in, so it is best to interpret all stated values as typical but not definitive. Values are omitted in cases when there aren't enough measurements or there is too much disagreement in the literature to estimate a typical value. In order to be as complete as possible some unpublished results from the author's lab are included and can be identified by the lack of a reference. Unless noted all films are polycrystalline or amorphous.

The hybridization gap in strained-layer InAs/InxGa1-xSb quantum spin Hall insulators (QSHIs) is significantly enhanced compared to binary InAs/GaSb QSHI structures, where the typical indium composition, x, ranges between 0.2 and 0.4. This enhancement prompts a critical question: to what extent can quantum wells (QWs) be strained while still preserving the fundamental QSHI phase? In this study, we demonstrate the controlled molecular beam epitaxial (MBE) growth of highly strained-layer QWs with an indium composition of x = 0.5. These structures possess a substantial compressive strain within the In0.5Ga0.5Sb QW. Detailed crystal structure analyses confirm the exceptional quality of the resulting epitaxial films, indicating coherent lattice structures and the absence of visible dislocations. Transport measurements further reveal that the QSHI phase in InAs/In0.5Ga0.5Sb QWs is robust and protected by time-reversal symmetry. Notably, the edge states in these systems exhibit giant magnetoresistance when subjected to a modest perpendicular magnetic field. This behavior is in agreement with the Z2 topological property predicted by the Bernevig-Hughes-Zhang (BHZ) model, confirming the preservation of topologically protected edge transport in the presence of enhanced bulk strain.

We investigate Josephson arrays consisting of a dice-lattice network of superconducting weak links surrounding rhombic plaquettes of proximitized semiconductor. Josephson coupling of the weak links and electron density in the plaquettes are independently controlled by separate electrostatic gates. Applied magnetic flux results in an intricate pattern of switching currents associated with frustration, f. For depleted plaquettes, the switching current is nearly periodic in f, expected for a phase-only description, while occupied plaquettes yield a decreasing envelope of switching currents with increasing f. A model of flux dependence based on ballistic small-area junctions and diffusive large-area plaquettes yields excellent agreement with experiment.

Trapped fields of over 20 T are, in principle, achievable in bulk, single-grain high temperature cuprate superconductors. The principle barriers to realizing such performance are, firstly, the large tensile stresses that develop during the magnetization of such trapped-field magnets as a result of the Lorentz force, which lead to brittle fracture of these ceramic-like materials at high fields and, secondly, catastrophic thermal instabilities as a result of flux movement during magnetization. Moreover, for a batch of samples nominally fabricated identically, the statistical nature of the failure mechanism means the best performance (i.e. trapped fields of over 17 T) cannot be attained reliably. The magnetization process, particularly to higher fields, also often damages the samples such that they cannot repeatedly trap high fields following subsequent magnetization. In this study, we report the sequential trapping of magnetic fields of ~ 17 T, achieving 16.8 T at 26 K initially and 17.6 T at 22.5 K subsequently, in a stack of two Ag-doped GdBa2Cu3O7-δ bulk superconductor composites of diameter 24 mm reinforced with (1) stainless-steel laminations, and (2) shrink-fit stainless steel rings. A trapped field of 17.6 T is, in fact, comparable with the highest trapped fields reported to date for bulk superconducting magnets of any mechanical and chemical composition, and this was achieved using the first composite stack to be fabricated by this technique.

Autferroics, recently proposed as a sister branch of multiferroics, exhibit strong intrinsic magnetoelectricity, but ferroelectricity and magnetism are mutually exclusive rather than coexisting. Here, a general model is considered based on the Landau theory, to clarify the distinction between multi and autferroics by qualitative change-rotation in Landau free energy landscape and in particular phase mapping. The TiGeSe_3 exemplifies a factual material, whose first-principles computed Landau coefficients predict its autferroicity. Our investigations pave the way for an alternative avenue in the pursuit of intrinsically strong magnetoelectrics.

Material and product life cycles are based on complex value chains of technology-specific elements. Resource strategy aspects of essential and strategic raw materials have a direct impact on applications of new functionalized materials or the development of novel products. Thus, an urgent challenge of modern materials science is to obtain information about the supply risk and environmental aspects of resource utilization, especially at an early stage of basic research. Combining the fields of materials science, industrial engineering and resource strategy enables a multidisciplinary research approach to identify specific risks within the value chain, aggregated as the so-called resource criticality. Here, we demonstrate a step-by-step criticality assessment in the sector of basic materials research for multifunctional hexagonal manganite YMnO3, which can be a candidate for future electronic systems. Raw material restrictions can be quantitatively identified, even at such an early stage of materials research, from eleven long-term indicators including our new developed Sector Competition Index. This approach for resource strategy for modern material science integrates two objective targets: reduced supply risk and enhanced environmental sustainability of new functionalized materials, showing drawbacks but also benefits towards a sustainable materials research and development.

We successfully synthesized a novel intermetallic compound rm CrFe_2Ge_2 with the rm Fe_{13}Ge_{8}-type crystal structure. A structural study is presented combining single-crystal X-ray diffraction and Mössbauer spectroscopy analysis, confirming the presence of two distinct Fe sublattices. rm CrFe_2Ge_2 exhibits a metallic ferromagnetic state with T_C approx rm 200~K. This material does not follow the usual M^2 propto H/M Arrott law, rather a modified Arrott law is obeyed in this material. The critical exponents determined from detailed analysis of modified Arrott plots were found to be β= 0.392, γ= 1.309 and δ= 4.26 obtained from the critical isotherm at T_{rm C} =rm 200~K. Self-consistency and reliability of the critical exponent analysis were verified by the Widom scaling law and scaling equations. Using the results from renormalization group calculation, the critical behavior of rm CrFe_2Ge_2 is akin to that of a d=3, n=3 ferromagnet in which the magnetic exhange distance is found to decay as J(r) approx r^{-4.86} with long-range magnetic coupling. The evaluated Rhodes-Wohlfarth ratio of sim 3 points to an itinerant ferromagnetic ground state. Low-temperature measurements of resistivity, p(T), and specific heat, C_P(T), reveal a pronounced contribution from electron-magnon scattering.

Quantum materials hosting Weyl fermions have opened a new era of research in condensed matter physics. First proposed in 1929 in particle physics, Weyl fermions have yet to be observed as elementary particles. In 2015, Weyl fermions were detected as collective electronic excitations in the strong spin-orbit coupled material tantalum arsenide, TaAs. This discovery was followed by a flurry of experimental and theoretical explorations of Weyl phenomena in materials. Weyl materials naturally lend themselves to the exploration of the topological index associated with Weyl fermions and their divergent Berry curvature field, as well as the topological bulk-boundary correspondence giving rise to protected conducting surface states. Here, we review the broader class of Weyl topological phenomena in materials, starting with the observation of emergent Weyl fermions in the bulk and of Fermi arc states on the surface of the TaAs family of crystals by photoemission spectroscopy. We then discuss some of the exotic optical and magnetic responses observed in these materials, as well as the progress in developing some of the related chiral materials. We discuss the conceptual development of high-fold chiral fermions, which generalize Weyl fermions, and we review the observation of high-fold chiral fermion phases by taking the rhodium silicide, RhSi, family of crystals as a prime example. Lastly, we discuss recent advances in Weyl-line phases in magnetic topological materials. With this Review, we aim to provide an introduction to the basic concepts underlying Weyl physics in condensed matter, and to representative materials and their electronic structures and topology as revealed by spectroscopic studies. We hope this work serves as a guide for future theoretical and experimental explorations of chiral fermions and related topological quantum systems with potentially enhanced functionalities.

We conducted a high-throughput search for topological magnetic materials on 522 new, experimentally reported commensurate magnetic structures from MAGNDATA, doubling the number of available materials on the Topological Magnetic Materials database. This brings up to date the previous studies which had become incomplete due to the discovery of new materials. For each material, we performed first-principle electronic calculations and diagnosed the topology as a function of the Hubbard U parameter. Our high-throughput calculation led us to the prediction of 250 experimentally relevant topologically non-trivial materials, which represent 47.89% of the newly analyzed materials. We present five remarkable examples of these materials, each showcasing a different topological phase: Mn{}_2AlB{}_2 (BCSID 1.508), which exhibits a nodal line semimetal to topological insulator transition as a function of SOC, CaMnSi (BCSID 0.599), a narrow gap axion insulator, UAsS (BCSID 0.594) a 5f-orbital Weyl semimetal, CsMnF{}_4 (BCSID 0.327), a material presenting a new type of quasi-symmetry protected closed nodal surface and FeCr{}_2S{}_4 (BCSID 0.613), a symmetry-enforced semimetal with double Weyls and spin-polarised surface states.

Superconductor electronics (SCE) is a promising complementary and beyond CMOS technology. However, despite its practical benefits, the realization of SCE logic faces a significant challenge due to the absence of dense and scalable nonvolatile memory designs. While various nonvolatile memory technologies, including Non-destructive readout, vortex transitional memory (VTM), and magnetic memory, have been explored, achieving a superconductor random-access memory (RAM) crossbar array remains challenging. This paper introduces a novel, nonvolatile, high-density, and scalable VTM cell design for SCE applications. Our proposed design addresses scaling issues while boasting zero static power consumption characteristics. Our design leverages current summation, enabling analog multiply-accumulate operations -an essential feature for many in-memory computational tasks. We demonstrate the efficacy of our approach with a 32 x 32 superconductor memory array operating at 20 GHz. This design effectively addresses scaling issues and utilizes current summation that can be used for analog multiply-accumulate operations. Additionally, we showcase the accumulation property of the memory through analog simulations conducted on an 8 x 8 superconductor crossbar array.

The magnetic phase diagram at zero external field of an ensemble of dipoles with uniaxial anisotropy on a FCC lattice is investigated from tempered Monte Carlo simulations. The uniaxial anisotropy is characterized by a random distribution of easy axes and its magnitude lambda_u is the driving force of disorder and consequently frustration. The phase diagram, separating the paramagnetic, ferromagnetic, quasi long range ordered ferromagnetic and spin-glass regions is thus considered in the temperature, lambda_u plane. This system is aimed at modeling the magnetic phase diagram of supracrystals of magnetic nanoparticles.

The key challenge in advancing multivalent-ion batteries lies in finding suitable intercalation hosts. Open-tunnel oxides, featuring one-dimensional channels or nanopores, show promise for enabling effective ion transport. However, the vast range of compositional possibilities renders traditional experimental and quantum-based methods impractical for large-scale studies. This work presents a generative AI framework that uses the Crystal Diffusion Variational Autoencoder (CDVAE) and a fine-tuned Large Language Model (LLM) to expedite the discovery of stable open-tunneled oxide materials for multivalent-ion batteries. By combining machine learning with data mining techniques, five promising transition metal oxide (TMO) structures are generated. These structures, known for forming open-tunnel oxide frameworks, are structurally validated through Density Functional Theory (DFT). The results show that the generated structures have lower formation energies compared to similar compositions in the Materials Project (MP) database, indicating improved thermodynamic stability. Additionally, the graph-based M3GNet model is employed to relax further generated structures, providing a more computationally efficient alternative to DFT. Machine learning-based predictions of formation energy, band gap, and energy above the hull refine the selection process, leading to the identification of materials with significant potential for real-world battery applications. This research demonstrates the power of generative AI in rapidly exploring the vast chemical space of TMOs, offering a new approach to discovering stable open-tunnel oxides for multivalent-ion batteries. The results highlight the potential of this approach to contribute to more sustainable energy storage technologies, addressing the growing concerns surrounding the scarcity of lithium.

We present a comprehensive numerical study of a six-state clock model with a long-range dipolar type interaction. This model is motivated by the ferroelectric orders in the multiferroic hexagonal manganites. At low temperatures, trimerization of local atomic structures leads to six distinct but energetically degenerate structural distortion, which can be modeled by a six-state clock model. Moreover, the atomic displacements in the trimerized state further produce a local electric polarization whose sign depends on whether the clock variable is even or odd. These induced electric dipoles, which can be modeled by emergent Ising degrees of freedom, interact with each other via long-range dipolar interactions. Extensive Monte Carlo simulations are carried out to investigate low temperature phases resulting from the competing interactions. Upon lowering temperature, the system undergoes two Berezinskii-Kosterlitz-Thouless (BKT) transitions, characteristic of the standard six-state clock model in two dimensions. The dipolar interaction between emergent Ising spins induces a first-order transition into a ground state characterized by a three-fold degenerate stripe order. The intermediate phase between the discontinuous and the second BKT transition corresponds to a maze-like hexagonal liquid with short-range stripe ordering. Moreover, this intermediate phase also exhibits an unusual ferromagnetic order with two adjacent clock variables occupying the two types of stripes of the labyrinthine pattern.

In the context of quantum thermodynamics, quantum batteries have emerged as promising devices for energy storage and manipulation. Over the past decade, substantial progress has been made in understanding the fundamental properties of quantum batteries, with several experimental implementations showing great promise. This Perspective provides an overview of the solid-state materials platforms that could lead to fully operational quantum batteries. After briefly introducing the basic features of quantum batteries, we discuss organic microcavities, where superextensive charging has already been demonstrated experimentally. We then explore other materials, including inorganic nanostructures (such as quantum wells and dots), perovskite systems, and (normal and high-temperature) superconductors. Key achievements in these areas, relevant to the experimental realization of quantum batteries, are highlighted. We also address challenges and future research directions. Despite their enormous potential for energy storage devices, research into advanced materials for quantum batteries is still in its infancy. This paper aims to stimulate interdisciplinarity and convergence among different materials science research communities to accelerate the development of new materials and device architectures for quantum batteries.

As large language models continue to scale in size rapidly, so too does the computational power required to run them. Event-based networks on neuromorphic devices offer a potential way to reduce energy consumption for inference significantly. However, to date, most event-based networks that can run on neuromorphic hardware, including spiking neural networks (SNNs), have not achieved task performance even on par with LSTM models for language modeling. As a result, language modeling on neuromorphic devices has seemed a distant prospect. In this work, we demonstrate the first-ever implementation of a language model on a neuromorphic device - specifically the SpiNNaker 2 chip - based on a recently published event-based architecture called the EGRU. SpiNNaker 2 is a many-core neuromorphic chip designed for large-scale asynchronous processing, while the EGRU is architected to leverage such hardware efficiently while maintaining competitive task performance. This implementation marks the first time a neuromorphic language model matches LSTMs, setting the stage for taking task performance to the level of large language models. We also demonstrate results on a gesture recognition task based on inputs from a DVS camera. Overall, our results showcase the feasibility of this neuro-inspired neural network in hardware, highlighting significant gains versus conventional hardware in energy efficiency for the common use case of single batch inference.

Nonreciprocal circuit elements form an integral part of modern measurement and communication systems. Mathematically they require breaking of time-reversal symmetry, typically achieved using magnetic materials and more recently using the quantum Hall effect, parametric permittivity modulation or Josephson nonlinearities. Here, we demonstrate an on-chip magnetic-free circulator based on reservoir engineered optomechanical interactions. Directional circulation is achieved with controlled phase-sensitive interference of six distinct electro-mechanical signal conversion paths. The presented circulator is compact, its silicon-on-insulator platform is compatible with both superconducting qubits and silicon photonics, and its noise performance is close to the quantum limit. With a high dynamic range, a tunable bandwidth of up to 30 MHz and an in-situ reconfigurability as beam splitter or wavelength converter, it could pave the way for superconducting qubit processors with integrated and multiplexed on-chip signal processing and readout.

High-accuracy microwave sensing is widely demanded in various fields, ranging from cosmology to microwave quantum technology. Quantum receivers based on inorganic solid-state spin systems are promising candidates for such purpose because of the stability and compatibility, but their best sensitivity is currently limited to a few pT/rm{Hz}. Here, by utilising an enhanced readout scheme with the state-of-the-art solid-state maser technology, we develop a robust microwave quantum receiver functioned by organic molecular spins at ambient conditions. Owing to the maser amplification, the sensitivity of the receiver achieves 6.14 pm 0.17 fT/rm{Hz} which exceeds three orders of magnitude than that of the inorganic solid-state quantum receivers. The heterodyne detection without additional local oscillators improves bandwidth of the receiver and allows frequency detection. The scheme can be extended to other solid-state spin systems without complicated control pulses and thus enables practical applications such as electron spin resonance spectroscopy, dark matter searches, and astronomical observations.

We describe the first-principles design and subsequent synthesis of a new material with the specific functionalities required for a solid-state-based search for the permanent electric dipole moment of the electron. We show computationally that perovskite-structure europium barium titanate should exhibit the required large and pressure-dependent ferroelectric polarization, local magnetic moments, and absence of magnetic ordering even at liquid helium temperature. Subsequent synthesis and characterization of Eu_{0.5}Ba_{0.5}TiO_3 ceramics confirm the predicted desirable properties.

The simulation of large-scale systems with complex electron interactions remains one of the greatest challenges for the atomistic modeling of materials. Although classical force fields often fail to describe the coupling between electronic states and ionic rearrangements, the more accurate ab-initio molecular dynamics suffers from computational complexity that prevents long-time and large-scale simulations, which are essential to study many technologically relevant phenomena, such as reactions, ion migrations, phase transformations, and degradation. In this work, we present the Crystal Hamiltonian Graph neural Network (CHGNet) as a novel machine-learning interatomic potential (MLIP), using a graph-neural-network-based force field to model a universal potential energy surface. CHGNet is pretrained on the energies, forces, stresses, and magnetic moments from the Materials Project Trajectory Dataset, which consists of over 10 years of density functional theory static and relaxation trajectories of sim 1.5 million inorganic structures. The explicit inclusion of magnetic moments enables CHGNet to learn and accurately represent the orbital occupancy of electrons, enhancing its capability to describe both atomic and electronic degrees of freedom. We demonstrate several applications of CHGNet in solid-state materials, including charge-informed molecular dynamics in Li_xMnO_2, the finite temperature phase diagram for Li_xFePO_4 and Li diffusion in garnet conductors. We critically analyze the significance of including charge information for capturing appropriate chemistry, and we provide new insights into ionic systems with additional electronic degrees of freedom that can not be observed by previous MLIPs.

We propose a quantum repeater architecture that can operate under ambient conditions. Our proposal builds on recent progress towards non-cryogenic spin-photon interfaces based on nitrogen-vacancy centers, which have excellent spin coherence times even at room temperature, and optomechanics, which allows to avoid phonon-related decoherence and also allows the emitted photons to be in the telecom band. We apply the photon number decomposition method to quantify the fidelity and the efficiency of entanglement established between two remote electron spins. We describe how the entanglement can be stored in nuclear spins and extended to long distances via quasi-deterministic entanglement swapping operations involving the electron and nuclear spins. We furthermore propose schemes to achieve high-fidelity readout of the spin states at room temperature using the spin-optomechanics interface. Our work shows that long-distance quantum networks made of solid-state components that operate at room temperature are within reach of current technological capabilities.

Earlier, in the CINT program at Los Alamos National Laboratory, we focused ultrafast mode-locked lasers on the tip-sample junction of a scanning tunneling microscope to generate currents at hundreds of harmonics of the laser pulse repetition frequency. Each harmonic has a signal-to-noise ratio of 20 dB with a 10-dB linewidth of only 3 Hz. Now we model closed quantum nanocircuits with rectangular, triangular, or delta-function barrier, shunted by a beryllium filament for quasi-coherent electron transport over mean-free paths as great as 68 nm. The time-independent Schrödinger equation is solved with the boundary conditions that the wavefunction and its derivative are continuous at both connections. These four boundary conditions are used to form a four-by-four complex matrix equation with only zeros in the right-hand column vector which is required to have a non-trivial solution with each of the closed nanocircuits. Each model has four parameters: (1) the barrier length, (2) the height and shape of the barrier, (3) the length of the pre-barrier, and (4) the electron energy. Any three of these may be specified and then the fourth is varied to bring the determinant to zero to find the solutions on lines or surfaces in the space defined by the four parameters. First, we use a simplistic model having a rectangular barrier. The second model has a triangular barrier as a first approximation to field emission, and we are considering applying this approach for a self-contained nanoscale extension of our earlier effort to generate the harmonics at Los Alamos. The third model has a delta-function barrier, and the fourth model is an extension of the first one where the width of the rectangular barrier is varied inversely with its height.

The long term scaling prospects for solid-state quantum computing architectures relies heavily on the ability to simply and reliably measure and control the coherent electron interaction strength, known as the tunnel coupling, t_c. Here, we describe a method to extract the t_c between two quantum dots (QDs) utilising their different tunnel rates to a reservoir. We demonstrate the technique on a few donor triple QD tunnel coupled to a nearby single-electron transistor (SET) in silicon. The device was patterned using scanning tunneling microscopy-hydrogen lithography allowing for a direct measurement of the tunnel coupling for a given inter-dot distance. We extract {t}_{{c}}=5.5pm 1.8;{GHz} and {t}_{{c}}=2.2pm 1.3;{GHz} between each of the nearest-neighbour QDs which are separated by 14.5 nm and 14.0 nm, respectively. The technique allows for an accurate measurement of t_c for nanoscale devices even when it is smaller than the electron temperature and is an ideal characterisation tool for multi-dot systems with a charge sensor.

We present an open-source database of superconducting quantum device designs that may be used as the starting point for customized devices. Each design can be generated programmatically using the open-source Qiskit Metal package, and simulated using finite-element electromagnetic solvers. We present a robust workflow for achieving high accuracy on design simulations. Many designs in the database are experimentally validated, showing excellent agreement between simulated and measured parameters. Our database includes a front-end interface that allows users to generate ``best-guess'' designs based on desired circuit parameters. This project lowers the barrier to entry for research groups seeking to make a new class of devices by providing them a well-characterized starting point from which to refine their designs.

Over the past two decades, 2D materials have rapidly evolved into a diverse and expanding family of material platforms. Many members of this materials class have demonstrated their potential to deliver transformative impact on fundamental research and technological applications across different fields. In this roadmap, we provide an overview of the key aspects of 2D material research and development, spanning synthesis, properties and commercial applications. We specifically present roadmaps for high impact 2D materials, including graphene and its derivatives, transition metal dichalcogenides, MXenes as well as their heterostructures and moiré systems. The discussions are organized into thematic sections covering emerging research areas (e.g., twisted electronics, moiré nano-optoelectronics, polaritronics, quantum photonics, and neuromorphic computing), breakthrough applications in key technologies (e.g., 2D transistors, energy storage, electrocatalysis, filtration and separation, thermal management, flexible electronics, sensing, electromagnetic interference shielding, and composites) and other important topics (computational discovery of novel materials, commercialization and standardization). This roadmap focuses on the current research landscape, future challenges and scientific and technological advances required to address, with the intent to provide useful references for promoting the development of 2D materials.

The discoveries of intrinsically magnetic topological materials, including semimetals with a large anomalous Hall effect and axion insulators, have directed fundamental research in solid-state materials. Topological quantum chemistry has enabled the understanding of and the search for paramagnetic topological materials. Using magnetic topological indices obtained from magnetic topological quantum chemistry (MTQC), here we perform a high-throughput search for magnetic topological materials based on first-principles calculations. We use as our starting point the Magnetic Materials Database on the Bilbao Crystallographic Server, which contains more than 549 magnetic compounds with magnetic structures deduced from neutron-scattering experiments, and identify 130 enforced semimetals (for which the band crossings are implied by symmetry eigenvalues), and topological insulators. For each compound, we perform complete electronic structure calculations, which include complete topological phase diagrams using different values of the Hubbard potential. Using a custom code to find the magnetic co-representations of all bands in all magnetic space groups, we generate data to be fed into the algorithm of MTQC to determine the topology of each magnetic material. Several of these materials display previously unknown topological phases, including symmetry-indicated magnetic semimetals, three-dimensional anomalous Hall insulators and higher-order magnetic semimetals. We analyse topological trends in the materials under varying interactions: 60 per cent of the 130 topological materials have topologies sensitive to interactions, and the others have stable topologies under varying interactions. We provide a materials database for future experimental studies and open-source code for diagnosing topologies of magnetic materials.

The design of functional materials with desired properties is essential in driving technological advances in areas like energy storage, catalysis, and carbon capture. Generative models provide a new paradigm for materials design by directly generating entirely novel materials given desired property constraints. Despite recent progress, current generative models have low success rate in proposing stable crystals, or can only satisfy a very limited set of property constraints. Here, we present MatterGen, a model that generates stable, diverse inorganic materials across the periodic table and can further be fine-tuned to steer the generation towards a broad range of property constraints. To enable this, we introduce a new diffusion-based generative process that produces crystalline structures by gradually refining atom types, coordinates, and the periodic lattice. We further introduce adapter modules to enable fine-tuning towards any given property constraints with a labeled dataset. Compared to prior generative models, structures produced by MatterGen are more than twice as likely to be novel and stable, and more than 15 times closer to the local energy minimum. After fine-tuning, MatterGen successfully generates stable, novel materials with desired chemistry, symmetry, as well as mechanical, electronic and magnetic properties. Finally, we demonstrate multi-property materials design capabilities by proposing structures that have both high magnetic density and a chemical composition with low supply-chain risk. We believe that the quality of generated materials and the breadth of MatterGen's capabilities represent a major advancement towards creating a universal generative model for materials design.

This paper explores the potential of cryogenic semiconductor computing and superconductor electronics as promising alternatives to traditional semiconductor devices. As semiconductor devices face challenges such as increased leakage currents and reduced performance at higher temperatures, these novel technologies offer high performance and low power computation. Conventional semiconductor electronics operating at cryogenic temperatures (below -150{\deg}C or 123.15 K) can benefit from reduced leakage currents and improved electron mobility. On the other hand, superconductor electronics, operating below 10 K, allow electrons to flow without resistance, offering the potential for ultra-low-power, high-speed computation. This study presents a comprehensive performance modeling and analysis of these technologies and provides insights into their potential benefits and limitations. We implement models of in-order and out-of-order cores operating at high clock frequencies associated with superconductor electronics and cryogenic semiconductor computing in gem5. We evaluate the performance of these components using workloads representative of real-world applications like NPB, SPEC CPU2006, and GAPBS. Our results show the potential speedups achievable by these components and the limitations posed by cache bandwidth. This work provides valuable insights into the performance implications and design trade-offs associated with cryogenic and superconductor technologies, laying the foundation for future research in this field using gem5.

We review theoretical and experimental highlights in transport in two-dimensional materials focussing on key developments over the last five years. Topological insulators are finding applications in magnetic devices, while Hall transport in doped samples and the general issue of topological protection remain controversial. In transition metal dichalcogenides valley-dependent electrical and optical phenomena continue to stimulate state-of-the-art experiments. In Weyl semimetals the properties of Fermi arcs are being actively investigated. A new field, expected to grow in the near future, focuses on the non-linear electrical and optical responses of topological materials, where fundamental questions are once more being asked about the intertwining roles of the Berry curvature and disorder scattering. In topological superconductors the quest for chiral superconductivity, Majorana fermions and topological quantum computing is continuing apace.

Simulating large, strongly interacting fermionic systems remains a major challenge for existing numerical methods. In this work, we present, for the first time, the application of neural quantum states - specifically, hidden fermion determinant states (HFDS) - to simulate the strongly interacting limit of the Fermi-Hubbard model, namely the t-J model, across the entire doping regime. We demonstrate that HFDS achieve energies competitive with matrix product states (MPS) on lattices as large as 8 times 8 sites while using several orders of magnitude fewer parameters, suggesting the potential for efficient application to even larger system sizes. This remarkable efficiency enables us to probe low-energy physics across the full doping range, providing new insights into the competition between kinetic and magnetic interactions and the nature of emergent quasiparticles. Starting from the low-doping regime, where magnetic polarons dominate the low energy physics, we track their evolution with increasing doping through analyses of spin and polaron correlation functions. Our findings demonstrate the potential of determinant-based neural quantum states with inherent fermionic sign structure, opening the way for simulating large-scale fermionic systems at any particle filling.

We have systematically investigated the grain boundary (GB) angle dependence of transport properties for NdFeAs(O,F) fabricated on [001]-tilt symmetric MgO bicrystal substrates. In our previous study, NdFeAs(O,F) bicrystal films showed a weak-link behaviour even at a GB angle of 6°. However, this was caused by an extrinsic effect originating from the damage to both NdFeAs(O,F) and MgO substrate by excess F-diffusion along the grain boundary. To investigate the intrinsic nature of grain boundaries, we minimized the damage to NdFeAs(O,F) and MgO by reducing the deposition temperature of NdOF over-layer needed for F-doping. The resultant NdFeAs(O,F) bicrystal films have a critical angle of 8.5°, above which Jc starts to decrease exponentially. This critical angle is almost the same as those of other Fe-based superconductors.

As neural computation is revolutionizing the field of Artificial Intelligence (AI), rethinking the ideal neural hardware is becoming the next frontier. Fast and reliable von Neumann architecture has been the hosting platform for neural computation. Although capable, its separation of memory and computation creates the bottleneck for the energy efficiency of neural computation, contrasting the biological brain. The question remains: how can we efficiently combine memory and computation, while exploiting the physics of the substrate, to build intelligent systems? In this thesis, I explore an alternative way with memristive devices for neural computation, where the unique physical dynamics of the devices are used for inference, learning and routing. Guided by the principles of gradient-based learning, we selected functions that need to be materialized, and analyzed connectomics principles for efficient wiring. Despite non-idealities and noise inherent in analog physics, I will provide hardware evidence of adaptability of local learning to memristive substrates, new material stacks and circuit blocks that aid in solving the credit assignment problem and efficient routing between analog crossbars for scalable architectures.

The discovery of topological quantum states marks a new chapter in both condensed matter physics and materials sciences. By analogy to spin electronic system, topological concepts have been extended into phonons, boosting the birth of topological phononics (TPs). Here, we present a high-throughput screening and data-driven approach to compute and evaluate TPs among over 10,000 materials. We have clarified 5014 TP materials and classified them into single Weyl, high degenerate Weyl, and nodal-line (ring) TPs. Among them, three representative cases of TPs have been discussed in detail. Furthermore, we suggest 322 TP materials with potential clean nontrivial surface states, which are favorable for experimental characterizations. This work significantly increases the current library of TP materials, which enables an in-depth investigation of their structure-property relations and opens new avenues for future device design related to TPs.

Critical temperature, T_c, and the transition width, ΔT_c, are two primary parameters of the superconducting transition. The latter parameter reflects the superconducting state disturbance originating from the thermodynamic fluctuations, atomic disorder, applied magnetic field, the presence of secondary crystalline phases, applied pressure, etc. Recently, Hirsch and Marsiglio (2020 arXiv:2012.12796) performed an analysis of the transition width in several near-room-temperature superconductors (NRTS) and reported that the reduced transition width, ΔT_c/T_c, in these materials does not follow a conventional trend of transition width broadening on applied magnetic field observed in low- and high-T_c superconductors. Here we present thorough mathematical analysis of the magnetoresistive data, R(T,B), for the high-entropy alloy (ScZrNb)_{0.65}[RhPd]_{0.35} and hydrogen-rich superconductors of Im-3m-H_{3}S, C2/m-LaH_{10} and P63/mmc-CeH_9. We found that the reduced transition width, ΔT_c/T_c, in these materials does follow a conventional broadening trend on applied magnetic field.

The spin liquid phase is one of the prominent strongly interacting topological phases of matter whose unambiguous confirmation is yet to be reached despite intensive experimental efforts on numerous candidate materials. Recently, a new family of correlated honeycomb materials, in which strong spin-orbit coupling allows for various bond-dependent spin interactions, have been promising candidates to realize the Kitaev spin liquid. Here we study a model with bond-dependent spin interactions and show numerical evidence for the existence of an extended quantum spin liquid region, which is possibly connected to the Kitaev spin liquid state. These results are used to provide an explanation of the scattering continuum seen in neutron scattering on α-RuCl_3.

Mott insulators with large and active (or multiflavor) local Hilbert spaces widely occur in quantum materials and ultracold atomic systems, and are dubbed "multiflavor Mott insulators". For these multiflavored Mott insulating materials, the spin-only description with the quadratic spin interactions is often insufficient to capture the major physical processes. In the situation with active orbitals, the Kugel-Khomskii superexchange model was then proposed. We briefly review this historical model and discuss the modern developments beyond the original spin-orbital context. These include and are not restricted to the 4d/5d transition metal compounds with the spin-orbit-entangled J=3/2 quadruplets, the rare-earth magnets with two weakly-separated crystal field doublets, breathing magnets and/or the cluster and molecular magnets, et al. We explain the microscopic origin of the emergent Kugel-Khomskii physics in each realization with some emphasis on the J=3/2 quadruplets, and refer the candidate multiflavor Mott insulators as "J=3/2 Mott insulators". For the ultracold atoms, we review the multiflavor Mott insulator realization with the ultracold alkaline and alkaline-earth atoms on the optical lattices. Despite a large local Hilbert space from the atomic hyperfine spin states, the system could naturally realize a large symmetry group such as the Sp(N) and SU(N) symmetries. These ultracold atomic systems lie in the large-N regime of these symmetry groups and are characterized by strong quantum fluctuations. The Kugel-Khomskii physics and the exotic quantum ground states with the "baryon-like" physics can appear in various limits. We conclude with our vision and outlook on this subject.

Axion insulators possess a quantized axion field theta=pi protected by combined lattice and time-reversal symmetry, holding great potential for device applications in layertronics and quantum computing. Here, we propose a high-spin axion insulator (HSAI) defined in large spin-s representation, which maintains the same inherent symmetry but possesses a notable axion field theta=(s+1/2)^2pi. Such distinct axion field is confirmed independently by the direct calculation of the axion term using hybrid Wannier functions, layer-resolved Chern numbers, as well as the topological magneto-electric effect. We show that the guaranteed gapless quasi-particle excitation is absent at the boundary of the HSAI despite its integer surface Chern number, hinting an unusual quantum anomaly violating the conventional bulk-boundary correspondence. Furthermore, we ascertain that the axion field theta can be precisely tuned through an external magnetic field, enabling the manipulation of bonded transport properties. The HSAI proposed here can be experimentally verified in ultra-cold atoms by the quantized non-reciprocal conductance or topological magnetoelectric response. Our work enriches the understanding of axion insulators in condensed matter physics, paving the way for future device applications.

Among a huge variety of known two-dimensional materials, some of them have anisotropic crystal structures; examples include so different systems as a few-layer black phoshphorus (phosphorene), beryllium nitride BeN_4, van der Waals magnet CrSBr, rhenium dichalgogenides ReX_2. As a consequence, their optical and electronic properties turn out to be highly anisotropic as well. In some cases, the anisotropy results not just in a smooth renormalization of observable properties in comparison with the isotropic case but in the appearance of dramatically new physics. The examples are hyperbolic plasmons and excitons, strongly anisotropic ordering of adatoms at the surface of two-dimensional or van der Waals materials, essential change of transport and superconducting properties. Here, we present a systematic review of electronic structure, transport and optical properties of several representative groups of anisotropic two-dimensional materials including semiconductors, anisotropic Dirac and semi-Dirac materials, as well as superconductors.

Optically addressable solid-state spins have been extensively studied for quantum technologies, offering unique advantages for quantum computing, communication, and sensing. Advancing these applications is generally limited by finding materials that simultaneously provide lifetime-limited optical and long spin coherences. Here, we introduce ^{171}Yb^{3+} ions doped into a CaWO_4 crystal. We perform high-resolution spectroscopy of the excited state, and demonstrate all-optical coherent control of the electron-nuclear spin ensemble. We find narrow inhomogeneous broadening of the optical transitions of 185 MHz and radiative-lifetime-limited coherence time up to 0.75 ms. Next to this, we measure a spin-transition ensemble line width of 5 kHz and electron-nuclear spin coherence time reaching 0.15 seconds at zero magnetic field between 50 mK and 1 K temperatures. These results demonstrate the potential of ^{171}Yb^{3+}:CaWO_4 as a low-noise platform for building quantum technologies with ensemble-based memories, microwave-to-optical transducers, and optically addressable single-ion spin qubits.

Tunneling spectroscopy is widely used to examine the subgap spectra in semiconductor-superconductor nanostructures when searching for Majorana zero modes (MZMs). Typically, semiconductor sections controlled by local gates at the ends of hybrids serve as tunnel barriers. Besides detecting states only at the hybrid ends, such gate-defined tunnel probes can cause the formation of non-topological subgap states that mimic MZMs. Here, we develop an alternative type of tunnel probes to overcome these limitations. After the growth of an InSb-Al hybrid nanowire, a precisely controlled in-situ oxidation of the Al shell is performed to yield a nm-thick Al oxide layer. In such thin isolating layer, tunnel probes can be arbitrarily defined at any position along the hybrid nanowire by shadow-wall angle-deposition of metallic leads. This allows us to make multiple tunnel probes along single nanowire hybrids and to successfully identify Andreev bound states (ABSs) of various spatial extension residing along the hybrids.

Coupling together distinct correlated and topologically non-trivial electronic phases of matter can potentially induce novel electronic orders and phase transitions among them. Transition metal dichalcogenide compounds serve as a bedrock for exploration of such hybrid systems. They host a variety of exotic electronic phases and their Van der Waals nature enables to admix them, either by exfoliation and stacking or by stoichiometric growth, and thereby induce novel correlated complexes. Here we investigate the compound 4Hb-TaS_2 that interleaves the Mott-insulating state of 1T-TaS_2 and the putative spin liquid it hosts together with the metallic state of 2H-TaS_2 and the low temperature superconducting phase it harbors. We reveal a thermodynamic phase diagram that hosts a first order quantum phase transition between a correlated Kondo cluster state and a flat band state in which the Kondo cluster becomes depleted. We demonstrate that this intrinsic transition can be induced by an electric field and temperature as well as by manipulation of the interlayer coupling with the probe tip, hence allowing to reversibly toggle between the Kondo cluster and the flat band states. The phase transition is manifested by a discontinuous change of the complete electronic spectrum accompanied by hysteresis and low frequency noise. We find that the shape of the transition line in the phase diagram is determined by the local compressibility and the entropy of the two electronic states. Our findings set such heterogeneous structures as an exciting platform for systematic investigation and manipulation of Mott-metal transitions and strongly correlated phases and quantum phase transitions therein.

Elementary particles such as the electron carry several quantum numbers, for example, charge and spin. However, in an ensemble of strongly interacting particles, the emerging degrees of freedom can fundamentally differ from those of the individual constituents. Paradigmatic examples of this phenomenon are one-dimensional systems described by independent quasiparticles carrying either spin (spinon) or charge (holon). Here we report on the dynamical deconfinement of spin and charge excitations in real space following the removal of a particle in Fermi-Hubbard chains of ultracold atoms. Using space- and time-resolved quantum gas microscopy, we track the evolution of the excitations through their signatures in spin and charge correlations. By evaluating multi-point correlators, we quantify the spatial separation of the excitations in the context of fractionalization into single spinons and holons at finite temperatures.

The NMR measurements performed on a single orthorhombic crystal of superconducting ferromagnet UCoGe (Y.Ihara et al, Phys. Rev. Lett. v.105, 206403 (2010)) demonstrate strongly anisotropic magnetic properties of this material. The presented calculations allow to establish the dependence of longitudinal spin-lattice relaxation rate from temperature and magnetic field. The value 1/T_1T in field perpendicular to spontaneous magnetisation directed along c-axis has maximum in vicinity of Curie temperature whereas it does not reveal similar behaviour in field parallel to the direction of spontaneous magnetisation. Also there was shown that the longitudinal spin-lattice relaxation rate is strongly field dependent when the field directed in b-crystallographic direction but field independent if magnetic field is oriented along a-axis.

We have investigated the effects of strain on two-dimensional square lattices and examined the methods for inducing pseudo-magnetic fields. In both the columnar and staggered pi-flux square lattices, we have found that strain only modulates Fermi velocities rather than inducing pseudo-magnetic fields. However, spatially non-uniform on-site potentials (anisotropic hoppings) can create pseudo-magnetic fields in columnar (staggered) pi-flux square lattices. On the other hand, we demonstrate that strain does induce pseudo-magnetic fields in staggered zero-flux square lattices. By breaking a quarter of the bonds, we clarify that a staggered zero-flux square lattice is topologically equivalent to a honeycomb lattice and displays pseudo-vector potentials and pseudo-Landau levels at the Dirac points.

The excellent performance of modern deep neural networks (DNNs) comes at an often prohibitive training cost, limiting the rapid development of DNN innovations and raising various environmental concerns. To reduce the dominant data movement cost of training, process in-memory (PIM) has emerged as a promising solution as it alleviates the need to access DNN weights. However, state-of-the-art PIM DNN training accelerators employ either analog/mixed signal computing which has limited precision or digital computing based on a memory technology that supports limited logic functions and thus requires complicated procedure to realize floating point computation. In this paper, we propose a spin orbit torque magnetic random access memory (SOT-MRAM) based digital PIM accelerator that supports floating point precision. Specifically, this new accelerator features an innovative (1) SOT-MRAM cell, (2) full addition design, and (3) floating point computation. Experiment results show that the proposed SOT-MRAM PIM based DNN training accelerator can achieve 3.3times, 1.8times, and 2.5times improvement in terms of energy, latency, and area, respectively, compared with a state-of-the-art PIM based DNN training accelerator.

It is well known that there is a particle-hole symmetry for spin-polarized electrons with two-body interactions in a partially filled Landau level, which becomes exact in the limit where the cyclotron energy is large compared to the interaction strength, so one can ignore mixing between Landau levels. This symmetry is explicit in the description of a half-filled Landau level recently introduced by D. T. Son, using Dirac fermions, but it was thought to be absent in the older fermion-Chern- Simons approach, developed by Halperin, Lee, and Read and subsequent authors. We show here, however, that when properly evaluated, the Halperin, Lee, Read (HLR) theory gives results for long-wavelength low-energy physical properties, including the Hall conductance in the presence of impurities and the positions of minima in the magnetoroton spectra for fractional quantized Hall states close to half-filling, that are identical to predictions of the Dirac formulation. In fact, the HLR theory predicts an emergent particle-hole symmetry near half filling, even when the cyclotron energy is finite.

Hexagonal oxide perovskites, in contrast to the more familiar perovskites, allow for face-sharing of metal-oxygen octahedra or trigonal prisms within their structural frameworks. This results in dimers, trimers, tetramers, or longer fragments of chains of face-sharing octahedra in the crystal structures, and consequently in much shorter metal-metal distances and lower metal-oxygen-metal bond angles than are seen in the more familiar perovskites. The presence of the face-sharing octahedra can have a dramatic impact on magnetic properties of these compounds, and dimer-based materials, in particular, have been the subjects of many quantum-materials-directed studies in materials physics. Hexagonal oxide perovskites are of contemporary interest due to their potential for geometrical frustration of the ordering of magnetic moments or orbital occupancies at low temperatures, which is especially relevant to their significance as quantum materials. As such, several hexagonal oxide perovskites have been identified as potential candidates for hosting the quantum spin liquid state at low temperatures. In our view, hexagonal oxide perovskites are fertile ground for finding new quantum materials. This review briefly describes the solid state chemistry of many of these materials.

We present a neural flow wavefunction, Gauge-Fermion FlowNet, and use it to simulate 2+1D lattice compact quantum electrodynamics with finite density dynamical fermions. The gauge field is represented by a neural network which parameterizes a discretized flow-based transformation of the amplitude while the fermionic sign structure is represented by a neural net backflow. This approach directly represents the U(1) degree of freedom without any truncation, obeys Guass's law by construction, samples autoregressively avoiding any equilibration time, and variationally simulates Gauge-Fermion systems with sign problems accurately. In this model, we investigate confinement and string breaking phenomena in different fermion density and hopping regimes. We study the phase transition from the charge crystal phase to the vacuum phase at zero density, and observe the phase seperation and the net charge penetration blocking effect under magnetic interaction at finite density. In addition, we investigate a magnetic phase transition due to the competition effect between the kinetic energy of fermions and the magnetic energy of the gauge field. With our method, we further note potential differences on the order of the phase transitions between a continuous U(1) system and one with finite truncation. Our state-of-the-art neural network approach opens up new possibilities to study different gauge theories coupled to dynamical matter in higher dimensions.

The structural stability and phonon properties of SnSe/SnS superlattices at finite temperatures have been studied using machine learning force field molecular dynamics and the anharmonic phonon approach. The vertical SnSe/SnS superlattice undergoes a phase transition from the Pnma phase to a novel P4/nmm phase at finite temperatures, which is different from the high-temperature Cmcm phase of the SnSe and SnS systems. The stability of P4/nmm phase is determined by molecular dynamics trajectories and anharmonic phonon dispersion relations. The imaginary modes of TO modes at the q=M(1/2,1/2,0) point of the P4/nmm phase in harmonic approximation become rigid at elevated temperatures. An analysis of phonon power spectra upon temperature also confirms the dynamic stabilization. The P4/nmm phase has higher symmetry than the Pnma phase, and the phase transition between them is accompanied by competition between the Jahn-Teller effect and phonon anharmonicity. Unlike the anisotropic distribution of Sn-Se/S bonds in the Pnma phase, the P4/nmm phase forms chemical bonds with similar bond lengths both in-plane and interlayer, and their resonance effect can significantly enhance phonon scattering. The calculated phonon density of states and lifetime is strongly temperature dependent, demonstrating the heavy anharmonicity in the SnSe/SnS system. The P4/nmm phase has an extremely low lattice thermal conductivity, close to the experimental values of SnSe and SnS. Moreover, with the reduction of band gap and the enhancement of band degeneracy near the Fermi level, the P4/nmm phase exhibits superior electronic transport properties and significantly enhanced response to infrared and visible light. This makes it show great potential in thermoelectric and photovoltaic applications.

We demonstrate an all solid state semiconductor device, based on epitaxial single crystalline metal halide perovskites, enabling reversible control of a perovskite photoluminescence with a gate voltage. Fundamentally distinct from electroluminescent diodes, such a photoluminescence field effect transistor uses the gate electric field to electrostatically modulate the interfacial density of mobile charges, thereby affecting the radiative and nonradiative recombination channels of photocarriers. Varying the gate voltage in such transistors efficiently changes the rate of nonradiative interfacial recombination and modulates the photoluminescence intensity by 65 to 98 percent (depending on temperature). At favorable gating, nearly complete elimination of non-radiative losses can be achieved. This functionality, coupled with the strong visible-range absorption and emission, possible due to the high absorption coefficient, as well as controllable thickness and macroscopically homogeneous morphology of epitaxial perovskite films, leads to high external photoluminescence quantum efficiencies realized in large-area, thin-film devices. Such high-efficiency, scalable, electrostatically tunable optoelectronic switches broaden the potential applications of metal-halide perovskites in photonics and optoelectronics.

The one-dimensional J_1-J_2 q-state Potts model is solved exactly for arbitrary q, based on using OpenAI's latest reasoning model o3-mini-high to exactly solve the q=3 case. The exact results provide insights to outstanding physical problems such as the stacking of atomic or electronic orders in layered materials and the formation of a T_c-dome-shaped phase often seen in unconventional superconductors. The work is anticipated to fuel both the research in one-dimensional frustrated magnets for recently discovered finite-temperature application potentials and the fast moving topic area of AI for sciences.

The emergence of new nanoscale technologies has imposed significant challenges to designing reliable electronic systems in radiation environments. A few types of radiation like Total Ionizing Dose (TID) effects often cause permanent damages on such nanoscale electronic devices, and current state-of-the-art technologies to tackle TID make use of expensive radiation-hardened devices. This paper focuses on a novel and different approach: using machine learning algorithms on consumer electronic level Field Programmable Gate Arrays (FPGAs) to tackle TID effects and monitor them to replace before they stop working. This condition has a research challenge to anticipate when the board results in a total failure due to TID effects. We observed internal measurements of the FPGA boards under gamma radiation and used three different anomaly detection machine learning (ML) algorithms to detect anomalies in the sensor measurements in a gamma-radiated environment. The statistical results show a highly significant relationship between the gamma radiation exposure levels and the board measurements. Moreover, our anomaly detection results have shown that a One-Class Support Vector Machine with Radial Basis Function Kernel has an average Recall score of 0.95. Also, all anomalies can be detected before the boards stop working.

Topological kagome systems have been a topic of great interest in condensed matter physics due totheir unique electronic properties. The vanadium-based kagome materials are particularly intrigu-ing since they exhibit exotic phenomena such as charge density wave (CDW) and unconventionalsuperconductivity. The origin of these electronic instabilities is not fully understood, and the re-cent discovery of a charge density wave in ScV6Sn6provides a new avenue for investigation. In thiswork, we investigate the electronic structure of the novel kagome metal ScV6Sn6using angle resolvedphotoemission spectroscopy (ARPES), scanning tunneling microscopy (STM), and first-principlesdensity functional theory calculations. Our analysis reveals for the first time the temperature-dependent band changes of ScV6Sn6and identifies a new band that exhibits a strong signatureof a structure with CDW below the critical temperature. Further analysis revealed that this newband is due to the surface kagome layer of the CDW structure. In addition, a Lifshitz transition isidentified in the ARPES spectra that is related to the saddle point moving across the Fermi levelat the critical temperature for the CDW formation. This result shows the CDW behavior may alsobe related to nesting of the saddle point, similar to related materials. However, no energy gap is observed at the Fermi level and thus the CDW is not a typical Fermi surface nesting scenario. These results provide new insights into the underlying physics of the CDW in the kagome materials and could have implications for the development of materials with new functionality.

The brain has computational capabilities that surpass those of modern systems, being able to solve complex problems efficiently in a simple way. Neuromorphic engineering aims to mimic biology in order to develop new systems capable of incorporating such capabilities. Bio-inspired learning systems continue to be a challenge that must be solved, and much work needs to be done in this regard. Among all brain regions, the hippocampus stands out as an autoassociative short-term memory with the capacity to learn and recall memories from any fragment of them. These characteristics make the hippocampus an ideal candidate for developing bio-inspired learning systems that, in addition, resemble content-addressable memories. Therefore, in this work we propose a bio-inspired spiking content-addressable memory model based on the CA3 region of the hippocampus with the ability to learn, forget and recall memories, both orthogonal and non-orthogonal, from any fragment of them. The model was implemented on the SpiNNaker hardware platform using Spiking Neural Networks. A set of experiments based on functional, stress and applicability tests were performed to demonstrate its correct functioning. This work presents the first hardware implementation of a fully-functional bio-inspired spiking hippocampal content-addressable memory model, paving the way for the development of future more complex neuromorphic systems.

Magnetite is an important mineral with many interesting applications related to its magnetic, electrical and thermal properties. Typically studied by electronic structure calculations, these methods are unable to capture the complex ion dynamics at relevant temperatures, time and length scales. We present a hybrid Monte Carlo/Molecular Dynamics (MC/MD) method based on iron oxidation state exchange for accurate atomistic modelling of bulk magnetite, magnetite surfaces and nanoparticles that captures the complex ionic dynamics. By comparing oxidation state patterns with those obtained from density functional theory, we confirmed the accuracy of our approach. Lattice distortions leading to the stabilisation of excess charges and a critical surface thickness at which the oxidation states transition from ordered to disordered were observed. This simple yet efficient approach paves the way for elucidating aspects of oxidation state ordering of inverse spinel structures in general and battery materials in particular.

Berry curvature physics and quantum geometric effects have been instrumental in advancing topological condensed matter physics in recent decades. Although Landau level-based flat bands and conventional 3D solids have been pivotal in exploring rich topological phenomena, they are constrained by their limited ability to undergo dynamic tuning. In stark contrast, moiré systems have risen as a versatile platform for engineering bands and manipulating the distribution of Berry curvature in momentum space. These moiré systems not only harbor tunable topological bands, modifiable through a plethora of parameters, but also provide unprecedented access to large length scales and low energy scales. Furthermore, they offer unique opportunities stemming from the symmetry-breaking mechanisms and electron correlations associated with the underlying flat bands that are beyond the reach of conventional crystalline solids. A diverse array of tools, encompassing quantum electron transport in both linear and non-linear response regimes and optical excitation techniques, provide direct avenues for investigating Berry physics. This review navigates the evolving landscape of tunable moiré materials, highlighting recent experimental breakthroughs in the field of topological physics. Additionally, we delineate several challenges and offer insights into promising avenues for future research.

We simulate the electronic and transport properties of metal/two-dimensional material/metal vertical heterostructures, with a focus on graphene, hexagonal boron nitride and two phases of molybdenum diselenide. Using density functional theory and non-equilibrium Green's function, we assess how stacking configurations and material thickness impact important properties, such as density of states, potential barriers and conductivity. For monolayers, strong orbital hybridization with the metallic electrodes significantly alters the electronic characteristics, with the formation of states within the gap of the semiconducting 2D materials. Trilayers reveal the critical role of interlayer coupling, where the middle layer retains its intrinsic properties, thus influencing the overall conductivity. Our findings highlight the potential for customized multilayer designs to optimize electronic device performance based on two-dimensional materials.

Molecular ferroelectric materials have attracted widespread attention due to their abundant chemical diversity, structural tunability, low synthesis temperature, and high flexibility. Meanwhile, the integration of molecular ferroelectric materials and Si is still challenging, while the fundamental understanding of the ferroelectric switching process is still lacking. Herein, we have successfully synthesized the imidazole perchlorate (ImClO4) single crystals and a series of high-quality highly-oriented thin films on a Si substrate. A high inverse piezoelectric coefficient (55.7 pm/V) is demonstrated for the thin films. Two types of domain bands can be observed (in the size of a few microns): type-I band tilts ~60{\deg} with respect to the horizontal axis, while the type-II band is perpendicular to the horizontal axis. Most of the domain walls (DWs) are 180{\deg} DWs for the two bands, while some 109{\deg} DWs can also be observed. Interestingly, the DWs in type-I band are curved, charged domain walls; while the 180{\deg} DWs in type-II band are straight, noncharged domain walls. After applying +20 V for 5 s through a PFM tip, the 180{\deg} DWs in type-I band shrink first, then disconnect from the band boundary, forming a needle-like domain with a size of ~100 nm. The needle-like domain will extend toward the band boundary after an inverse bias is applied (-20 V), and expand along the band boundary after touching the boundary. Whereas for the type-II domain band, the 180{\deg} DWs are more mobile than the 109{\deg} domain walls, which displaces ~500 nm after applying +20 V. While such displacement is much shorter after the application of a negative bias for the same duration, starting from the positively poled sample. We hope to spur further interest in the on-chip design of the molecular ferroelectrics based electronic devices.

Complementary metal-oxide semiconductor (CMOS) technology has radically reshaped the world by taking humanity to the digital age. Cramming more transistors into the same physical space has enabled an exponential increase in computational performance, a strategy that has been recently hampered by the increasing complexity and cost of miniaturization. To continue achieving significant gains in computing performance, new computing paradigms, such as quantum computing, must be developed. However, finding the optimal physical system to process quantum information, and scale it up to the large number of qubits necessary to build a general-purpose quantum computer, remains a significant challenge. Recent breakthroughs in nanodevice engineering have shown that qubits can now be manufactured in a similar fashion to silicon field-effect transistors, opening an opportunity to leverage the know-how of the CMOS industry to address the scaling challenge. In this article, we focus on the analysis of the scaling prospects of quantum computing systems based on CMOS technology.

Machine learning, particularly in the form of deep learning, has driven most of the recent fundamental developments in artificial intelligence. Deep learning is based on computational models that are, to a certain extent, bio-inspired, as they rely on networks of connected simple computing units operating in parallel. Deep learning has been successfully applied in areas such as object/pattern recognition, speech and natural language processing, self-driving vehicles, intelligent self-diagnostics tools, autonomous robots, knowledgeable personal assistants, and monitoring. These successes have been mostly supported by three factors: availability of vast amounts of data, continuous growth in computing power, and algorithmic innovations. The approaching demise of Moore's law, and the consequent expected modest improvements in computing power that can be achieved by scaling, raise the question of whether the described progress will be slowed or halted due to hardware limitations. This paper reviews the case for a novel beyond CMOS hardware technology, memristors, as a potential solution for the implementation of power-efficient in-memory computing, deep learning accelerators, and spiking neural networks. Central themes are the reliance on non-von-Neumann computing architectures and the need for developing tailored learning and inference algorithms. To argue that lessons from biology can be useful in providing directions for further progress in artificial intelligence, we briefly discuss an example based reservoir computing. We conclude the review by speculating on the big picture view of future neuromorphic and brain-inspired computing systems.

Crystal structure generation is a foundational challenge in materials discovery, particularly in designing functional inorganic crystalline materials with desired properties. Most existing diffusion-based generative models for crystals rely on complex, hand-crafted priors and modular architectures to separately model atom types, atomic positions, and lattice parameters. These methods often require customized diffusion processes and conditional denoising, which can introduce additional model complexities and inconsistencies. Here we introduce DiffCrysGen, a fully data-driven, score-based diffusion model that jointly learns the distribution of all structural components in crystalline materials. With crystal structure representation as unified 2D matrices, DiffCrysGen bypasses the need for task-specific priors or decoupled modules, enabling end-to-end generation of atom types, fractional coordinates, and lattice parameters within a single framework. Our model learns crystallographic symmetry and chemical validity directly from large-scale datasets, allowing it to scale to complex materials discovery tasks. As a demonstration, we applied DiffCrysGen to the design of rare-earth-free magnetic materials with high saturation magnetization, showing its effectiveness in generating stable, diverse, and property-aligned candidates for sustainable magnet applications.

Although quantum simulation can give insight into elusive or intractable physical phenomena, many quantum simulators are unavoidably limited in the models they mimic. Such is also the case for atom arrays interacting via Rydberg states - a platform potentially capable of simulating any kind of spin exchange model, albeit with currently unattainable experimental capabilities. Here, we propose a new route towards simulating generic spin exchange Hamiltonians in atom arrays, using Floquet engineering with both global and local control. To demonstrate the versatility and applicability of our approach, we numerically investigate the generation of several spin exchange models which have yet to be realized in atom arrays, using only previously-demonstrated experimental capabilities. Our proposed scheme can be readily explored in many existing setups, providing a path to investigate a large class of exotic quantum spin models.

Magnetic navigation (MagNav) is a rising alternative to the Global Positioning System (GPS) and has proven useful for aircraft navigation. Traditional aircraft navigation systems, while effective, face limitations in precision and reliability in certain environments and against attacks. Airborne MagNav leverages the Earth's magnetic field to provide accurate positional information. However, external magnetic fields induced by aircraft electronics and Earth's large-scale magnetic fields disrupt the weaker signal of interest. We introduce a physics-informed approach using Tolles-Lawson coefficients for compensation and Liquid Time-Constant Networks (LTCs) to remove complex, noisy signals derived from the aircraft's magnetic sources. Using real flight data with magnetometer measurements and aircraft measurements, we observe up to a 64% reduction in aeromagnetic compensation error (RMSE nT), outperforming conventional models. This significant improvement underscores the potential of a physics-informed, machine learning approach for extracting clean, reliable, and accurate magnetic signals for MagNav positional estimation.

The last few years have seen significant experimental progress in characterizing the copper-based hole-doped high temperature superconductors in the regime of low hole density, p. Quantum oscillations, NMR, X-ray, and STM experiments have shed much light on the nature of the ordering at low temperatures. We review evidence that the order parameter in the non-Lanthanum-based cuprates is a d-form factor density-wave. This novel order acts as an unexpected window into the electronic structure of the pseudogap phase at higher temperatures in zero field: we argue in favor of a `fractionalized Fermi liquid' (FL*) with 4 pockets of spin S=1/2, charge +e fermions enclosing an area specified by p.

We report a quasi-one-dimensional S = 1 spin chain compound BaNiTe2O7. This magnetic system has been investigated by magnetic susceptibility, specific heat, and neutron powder diffraction. These results indicate that BaNiTe2O7 develops a short-range magnetic correlation around T ~ 22 K. With further cooling, an antiferromagnetic phase transition is observed at TN ~ 5.4 K. Neutron powder diffraction revealed antiferromagnetic noncollinear order with a commensurate propagation vector k = (1/2, 1, 0). The refined magnetic moment size of Ni2+ at 1.5 K is 1.84{\mu}B, and its noncollinear spin texture is confirmed by first-principles calculations. Inelastic neutron-scattering results and density functional theory calculations confirmed the quasi-one-dimensional nature of the spin systems.

Quality of epitaxial films strongly depends on their structural and chemical match with the substrates: the more closely they match, the better the film quality is. Topological insulators (TI) such as Bi2Se3 thin films are of no exception. However, there do not exist commercial substrates that match with TI films both structurally and chemically, at the level commonly available for other electronic materials. Here, we introduce BiInSe3 bulk crystal as the best substrate for Bi2Se3 thin films. These films exhibit superior surface morphology, lower defect density and higher Hall mobility than those on other substrates, due to structural and chemical match provided by the BiInSe3 substrate. BiInSe3 substrate could accelerate the advance of TI research and applications.

When a topological insulator is incorporated into a Josephson junction, the system is predicted to reveal the fractional Josephson effect with a 4π-periodic current-phase relation. Here, we report the measurement of a 4π-periodic switching current through an asymmetric SQUID, formed by the higher-order topological insulator WTe_2. Contrary to the established opinion, we show that a high asymmetry in critical current and negligible loop inductance are not sufficient by themselves to reliably measure the current-phase relation. Instead, we find that our measurement is heavily influenced by additional inductances originating from the self-formed PdTe_{x} inside the junction. We therefore develop a method to numerically recover the current-phase relation of the system and find the 1.5,μm long junction to be best described in the short ballistic limit. Our results highlight the complexity of subtle inductance effects that can give rise to misleading topological signatures in transport measurements.

We point out that there are two different chiral spin liquid states on the triangular lattice and discuss the conducting states that are expected on doping them. These states labeled CS1 and CS2 are associated with two distinct topological orders with different edge states, although they both spontaneously break time reversal symmetry and exhibit the same quantized spin Hall conductance. While CSL1 is related to the Kalmeyer-Laughlin state, CSL2 is the ν=4 member of Kitaev's 16 fold way classification. Both states are described within the Abrikosov fermion representation of spins, and the effect of doping can be accessed by introducing charged holons. On doping CSL2, condensation of charged holons leads to a topological d+id superconductor. However on doping CSL1 , in sharp contrast , two different scenarios can arise: first, if holons condense, a chiral metal with doubled unit cell and finite Hall conductivity is obtained. However, in a second novel scenario, the internal magnetic flux adjusts with doping and holons form a bosonic integer quantum Hall (BIQH) state. Remarkably, the latter phase is identical to a d+id superconductor. In this case the Mott insulator to superconductor transition is associated with a bosonic variant of the integer quantum Hall plateau transition for the holon. We connect the above two scenarios to two recent numerical studies of doped chiral spin liquids on triangular lattice. Our work clarifies the complex relation between topological superconductors, chiral spin liquids and quantum criticality .

A bilayer formed by stacking two distinct materials creates a moiré lattice, which can serve as a platform for novel electronic phases. In this work we study a unique example of such a system: the graphene-black phosphorus heterostructure (G/BP), which has been suggested to have an intricate band structure. Most notably, the valence band hosts a quasi-one-dimensional region in the Brillouin zone of high density of states, suggesting that various many-body electronic phases are likely to emerge. We derive an effective tight-binding model that reproduces this band structure, and explore the emergent broken-symmetry phases when interactions are introduced. Employing a mean-field analysis, we find that the favored ground-state exhibits a striped spin density wave (SDW) order, characterized by either one of two-fold degenerate wave-vectors that are tunable by gating. Further exploring the phase-diagram controlled by gate voltage and the interaction strength, we find that the SDW-ordered state undergoes a metal to insulator transition via an intermediate metallic phase which supports striped SDW correlations. Possible experimental signatures are discussed, in particular a highly anisotropic dispersion of the collective excitations which should be manifested in electric and thermal transport.

The elementary CuO2 plane sustaining cuprate high-temperature superconductivity occurs typically at the base of a periodic array of edge-sharing CuO5 pyramids. Virtual transitions of electrons between adjacent planar Cu and O atoms, occurring at a rate t/{hbar} and across the charge-transfer energy gap E, generate 'superexchange' spin-spin interactions of energy Japprox4t^4/E^3 in an antiferromagnetic correlated-insulator state. However, Hole doping the CuO2 plane converts this into a very high temperature superconducting state whose electron-pairing is exceptional. A leading proposal for the mechanism of this intense electron-pairing is that, while hole doping destroys magnetic order it preserves pair-forming superexchange interactions governed by the charge-transfer energy scale E. To explore this hypothesis directly at atomic-scale, we combine single-electron and electron-pair (Josephson) scanning tunneling microscopy to visualize the interplay of E and the electron-pair density nP in {Bi_2Sr_2CaCu_2O_{8+x}}. The responses of both E and nP to alterations in the distance {\delta} between planar Cu and apical O atoms are then determined. These data reveal the empirical crux of strongly correlated superconductivity in CuO2, the response of the electron-pair condensate to varying the charge transfer energy. Concurrence of predictions from strong-correlation theory for hole-doped charge-transfer insulators with these observations, indicates that charge-transfer superexchange is the electron-pairing mechanism of superconductive {Bi_2Sr_2CaCu_2O_{8+x}}.

Battery health diagnostics today rely overwhelmingly on electrochemical signals measured at the cell terminals. A parallel literature has shown that magnetic sensing can resolve information that terminal-only measurements miss, but method development is limited by the absence, to the best of our knowledge, of public battery magnetic-measurement datasets paired with degradation labels. We release MagBridge-Battery v1.0, a synthetic dataset of 6,760 magnetic-field signatures that bridges real magnetic morphology from the Mohammadi-Jerschow Open Science Framework (OSF) archive with state-of-health (SOH) labels from the PulseBat dataset. The release contains 5,600 PulseBat-conditioned grounded samples, 600 synthetic sensor-anomaly samples derived from clean parents, and 560 low-voltage Regime-B extrapolation samples. A cell-disjoint, parent-child-leakage-free primary benchmark split is verified to contain zero overlapping cells, zero cross-split parent-child pairs, and zero sample-ID overlap. We define three primary benchmark tasks: SOH regression, second-life classification, and anomaly detection, plus an auxiliary anomaly-subtype classification task. A controlled label-shuffle ablation collapses SOH regression from R^2 approximately 0.77 to approximately 0, confirming that the bridge encodes input SOH non-trivially rather than producing label-aligned artifacts. The dataset is released on Zenodo under CC-BY-4.0, and the bridge code and benchmark suite are released under Apache-2.0. This work provides a public benchmark for magnetic-sensing battery diagnostics while paired magnetic-electrochemical measurements remain scarce.

Electrical control of individual spins and photons in solids is key for quantum technologies, but scaling down to small, static systems remains challenging. Here, we demonstrate nanoscale electrical tuning of neutral and charged excitons in monolayer WSe2 using 1-nm carbon nanotube gates. Electrostatic simulations reveal a confinement radius below 15 nm, reaching the exciton Bohr radius limit for few-layer dielectric spacing. In situ photoluminescence spectroscopy shows gate-controlled conversion between neutral excitons, negatively charged trions, and biexcitons at 4 K. Important for quantum information processing applications, our measurements indicate gating of a local 2D electron gas in the WSe2 layer, coupled to photons via trion transitions with binding energies exceeding 20 meV. The ability to deterministically tune and address quantum emitters using nanoscale gates provides a pathway towards large-scale quantum optoelectronic circuits and spin-photon interfaces for quantum networking.

We introduce NeuroSA, a neuromorphic architecture specifically designed to ensure asymptotic convergence to the ground state of an Ising problem using an annealing process that is governed by the physics of quantum mechanical tunneling using Fowler-Nordheim (FN). The core component of NeuroSA consists of a pair of asynchronous ON-OFF neurons, which effectively map classical simulated annealing (SA) dynamics onto a network of integrate-and-fire (IF) neurons. The threshold of each ON-OFF neuron pair is adaptively adjusted by an FN annealer which replicates the optimal escape mechanism and convergence of SA, particularly at low temperatures. To validate the effectiveness of our neuromorphic Ising machine, we systematically solved various benchmark MAX-CUT combinatorial optimization problems. Across multiple runs, NeuroSA consistently generates solutions that approach the state-of-the-art level with high accuracy (greater than 99%), and without any graph-specific hyperparameter tuning. For practical illustration, we present results from an implementation of NeuroSA on the SpiNNaker2 platform, highlighting the feasibility of mapping our proposed architecture onto a standard neuromorphic accelerator platform.

Through rational chemical design, and thanks to the hybrid nature of metal-organic frameworks (MOFs), it is possible to prepare molecule-based 2D magnetic materials stable at ambient conditions. Here, we illustrate the versatility of this approach by changing both the metallic nodes and the ligands in a family of layered MOFs that allows the tuning of their magnetic properties. Specifically, the reaction of benzimidazole-type ligands with different metal centres (MII = Fe, Co, Mn, Zn) in a solvent-free synthesis produces a family of crystalline materials, denoted as MUV-1(M), which order antiferromagnetically with critical temperatures that depend on M. Furthermore, the incorporation of additional substituents in the ligand results in a novel system, denoted as MUV-8, formed by covalently bound magnetic double-layers interconnected by van der Waals interactions, a topology that is very rare in the field of 2D materials and unprecedented for 2D magnets. These layered materials are robust enough to be mechanically exfoliated down to a few layers with large lateral dimensions. Finally, the robustness and crystallinity of these layered MOFs allow the fabrication of nanomechanical resonators that can be used to detect -- through laser interferometry -- the magnetic order in thin layers of these 2D molecule-based antiferromagnets.

As scanning tunneling microscopy is pushed towards fast local dynamics, a quantitative understanding of tunnel junctions under the influence of a fast AC driving signal is required, especially at the ultra-low temperatures relevant to spin dynamics and correlated electron states. We subject a superconductor-insulator-superconductor junction to a microwave signal from an antenna mounted in situ and examine the DC response of the contact to this driving signal. Quasi-particle tunneling and the Josephson effect can be interpreted in the framework of Tien-Gordon theory. The situation is more complex when it comes to higher order effects such as multiple Andreev reflections. Microwave assisted tunneling unravel these complex processes, providing deeper insights into tunneling than are available in a pure DC measurement.

The amplitude of ground state superconducting energy gap Δ(0) and relative jump in electronic specific heat at the transition temperature, ΔC{/}γT_c, are primary fundamental parameters of any superconductor. There are several well-established techniques to measure these values for bulk samples. However, there is limited number of techniques which can be applied to measure these parameters in atomically thin superconductors. Here we proposed a new approach to extract Δ(0) and ΔC{/}γT_c in atomically thin superconductors by utilizing perpendicular, Bc2,perp(T) (when magnetic field is applied in perpendicular direction to the film surface), and parallel, Bc2,||(T) (when magnetic field is applied in parallel direction to the film surface), upper critical field data. Deduced parameters for few layers thick Al, Sn, NbSe2, MoS2, magic angle twisted trilayer graphene (MATTG), and WTe2 are well matched values expected for strong- and moderately strong-coupled electron-phonon mediated superconductors. Observed, in many atomically thin superconductors, an enhancement of Bc2,||(0) above the Pauli-Clogston-Chandrasekhar limiting field (i.e., magnetic field required to break the Cooper pair) is explained based on the sample geometry, without an assumption that some exotic pairing mechanism, for instance, Ising-type, is emergent in these materials.